Diodes Incorporated DXTN10060DFJBQ-7
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- DXTN10060DFJBQ-7
- Diodes Incorporated
- SS LOW SAT TRANSISTOR U-DFN2020-
- Transistors - Bipolar (BJT) - Single
- DXTN10060DFJBQ-7 数据表
- 3-UDFN Exposed Pad
- Tape & Reel (TR)
-
无铅/符合RoHS - 12405
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number DXTN10060DFJBQ-7 |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer Diodes Incorporated |
| Description SS LOW SAT TRANSISTOR U-DFN2020- |
| Package Tape & Reel (TR) |
| Series Automotive, AEC-Q101 |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 3-UDFN Exposed Pad |
| Supplier Device Package U-DFN2020-3 (Type B) |
| Power - Max 1.8 W |
| Transistor Type NPN |
| Current - Collector (Ic) (Max) 4 A |
| Voltage - Collector Emitter Breakdown (Max) 60 V |
| Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce 340 @ 200mA, 2V |
| Frequency - Transition 125MHz |
| Package_case 3-UDFN Exposed Pad |
DXTN10060DFJBQ-7 保障
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• 质量保证
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Diodes Incorporated
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