EPC EPC8007ENGR
- EPC8007ENGR
- EPC
- TRANS GAN 40V 3.8A BUMPED DIE
- Transistors - FETs, MOSFETs - Single
- EPC8007ENGR 数据表
- Die
- Die
- 无铅/符合RoHS
- 4763
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
- 点击获取费率
Part Number EPC8007ENGR |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer EPC |
Description TRANS GAN 40V 3.8A BUMPED DIE |
Package Die |
Series eGaN? |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Technology GaNFET (Gallium Nitride) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 40V |
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) |
Rds On (Max) @ Id, Vgs 160 mOhm @ 500mA, 5V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 0.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds 39pF @ 20V |
Drive Voltage (Max Rds On, Min Rds On) 5V |
Vgs (Max) +6V, -5V |
Package_case Die |
EPC8007ENGR 保障
• 响应及时
• 质量保证
• 全球通行
• 具有竞争力的价格
• 供应链一站式配套服务
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