Fairchild Semiconductor FQU2N60CTU
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- FQU2N60CTU
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, 1
- Transistors - FETs, MOSFETs - Single
- FQU2N60CTU 数据表
- TO-251-3 Short Leads, IPak, TO-251AA
- Bulk
-
无铅/符合RoHS - 28869
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number FQU2N60CTU |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description POWER FIELD-EFFECT TRANSISTOR, 1 |
| Package Bulk |
| Series QFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package I-PAK |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.5W (Ta), 44W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-251-3 Short Leads, IPak, TO-251AA |
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