GeneSiC Semiconductor G3R160MT12J
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- G3R160MT12J
- GeneSiC Semiconductor
- SIC MOSFET N-CH 22A TO263-7
- Transistors - FETs, MOSFETs - Single
- G3R160MT12J 数据表
- TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Tube
-
无铅/符合RoHS - 829
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number G3R160MT12J |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer GeneSiC Semiconductor |
| Description SIC MOSFET N-CH 22A TO263-7 |
| Package Tube |
| Series G3R™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Supplier Device Package TO-263-7 |
| Technology SiCFET (Silicon Carbide) |
| Power Dissipation (Max) 128W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 22A (Tc) |
| Rds On (Max) @ Id, Vgs 192mOhm @ 10A, 15V |
| Vgs(th) (Max) @ Id 2.69V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs 28 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 800 V |
| Vgs (Max) ±15V |
| Drive Voltage (Max Rds On, Min Rds On) 15V |
| Package_case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
G3R160MT12J 保障
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