Harris Corporation HGT1S3N60B3DS
- HGT1S3N60B3DS
- Harris Corporation
- 7A, 600V, UFS N-CHANNEL IGBT
- Transistors - IGBTs - Single
- HGT1S3N60B3DS 数据表
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
- 无铅/符合RoHS
- 3918
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
- 点击获取费率
Part Number HGT1S3N60B3DS |
Category Transistors - IGBTs - Single |
Manufacturer Harris Corporation |
Description 7A, 600V, UFS N-CHANNEL IGBT |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263AB |
Power - Max 33.3 W |
Input Type Standard |
Reverse Recovery Time (trr) 28 ns |
Current - Collector (Ic) (Max) 7 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 3.5A |
Gate Charge 18 nC |
Td (on/off) @ 25°C 18ns/105ns |
Test Condition 480V, 3.5A, 82Ohm, 15V |
Current - Collector Pulsed (Icm) 20 A |
Switching Energy 66µJ (on), 88µJ (off) |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
HGT1S3N60B3DS 保障
• 响应及时
• 质量保证
• 全球通行
• 具有竞争力的价格
• 供应链一站式配套服务
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