Integra Technologies Inc. IGN1011L70
- IGN1011L70
- Integra Technologies Inc.
- GAN, RF POWER TRANSISTOR, L-BAND
- Transistors - FETs, MOSFETs - RF
- IGN1011L70 数据表
- PL32A2
- Bulk
- 无铅/符合RoHS
- 1872
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
- 点击获取费率
Part Number IGN1011L70 |
Category Transistors - FETs, MOSFETs - RF |
Manufacturer Integra Technologies Inc. |
Description GAN, RF POWER TRANSISTOR, L-BAND |
Package Bulk |
Series - |
Package / Case PL32A2 |
Supplier Device Package PL32A2 |
Frequency 1.03GHz ~ 1.09GHz |
Gain 22dB |
Noise Figure - |
Power - Output 80W |
Transistor Type GaN HEMT |
Voltage - Test 50 V |
Current - Test 22 mA |
Voltage - Rated 120 V |
Current Rating (Amps) - |
Package_case PL32A2 |
IGN1011L70 保障
• 响应及时
• 质量保证
• 全球通行
• 具有竞争力的价格
• 供应链一站式配套服务
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