Harris Corporation IRF630
- IRF630
- Harris Corporation
- MOSFET N-CH 200V 9A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRF630 数据表
- TO-220-3
- Tube
- 无铅/符合RoHS
- 4633
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
- 点击获取费率
Part Number IRF630 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Harris Corporation |
Description MOSFET N-CH 200V 9A TO220AB |
Package Tube |
Series - |
Operating Temperature - |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) - |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 9A (Tc) |
Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V |
Vgs (Max) - |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-220-3 |
IRF630 保障
• 响应及时
• 质量保证
• 全球通行
• 具有竞争力的价格
• 供应链一站式配套服务
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