IXYS IXTT10P60
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- IXTT10P60
- IXYS
- MOSFET P-CH 600V 10A TO268
- Transistors - FETs, MOSFETs - Single
- IXTT10P60 数据表
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Tube
-
无铅/符合RoHS - 4202
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number IXTT10P60 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET P-CH 600V 10A TO268 |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package TO-268AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 300W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 10A (Tc) |
| Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXTT10P60 保障
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