IXYS IXTY1R4N120PHV
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- IXTY1R4N120PHV
- IXYS
- MOSFET N-CH 1200V 1.4A TO252
- Transistors - FETs, MOSFETs - Single
- IXTY1R4N120PHV 数据表
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
无铅/符合RoHS - 20102
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number IXTY1R4N120PHV |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 1200V 1.4A TO252 |
| Package Cut Tape (CT) |
| Series Polar™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package TO-252AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 86W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs 13Ohm @ 700mA, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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