ON Semiconductor NDD04N60ZT4G
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- NDD04N60ZT4G
- ON Semiconductor
- MOSFET N-CH 600V 4.1A DPAK
- Transistors - FETs, MOSFETs - Single
- NDD04N60ZT4G 数据表
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tube
-
无铅/符合RoHS - 2722
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number NDD04N60ZT4G |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 600V 4.1A DPAK |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package DPAK |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 83W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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