Fairchild Semiconductor SI3443DV
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- SI3443DV
- Fairchild Semiconductor
- MOSFET P-CH 20V 4.4A MICRO6
- Transistors - FETs, MOSFETs - Single
- SI3443DV 数据表
- SOT-23-6 Thin, TSOT-23-6
- Bulk
-
无铅/符合RoHS - 23502
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number SI3443DV |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description MOSFET P-CH 20V 4.4A MICRO6 |
| Package Bulk |
| Series HEXFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package Micro6™(TSOP-6) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2W (Ta) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs 65mOhm @ 4.4A, 4.5V |
| Vgs(th) (Max) @ Id 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 1.079 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
| Package_case SOT-23-6 Thin, TSOT-23-6 |
SI3443DV 保障
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