Vishay Siliconix SIHB12N60E-GE3
- SIHB12N60E-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 12A D2PAK
- Transistors - FETs, MOSFETs - Single
- SIHB12N60E-GE3 数据表
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
- 无铅/符合RoHS
- 4679
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
- 点击获取费率
Part Number SIHB12N60E-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 600V 12A D2PAK |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D²PAK (TO-263) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 147W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 937 pF @ 100 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
SIHB12N60E-GE3 保障
• 响应及时
• 质量保证
• 全球通行
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Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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