Vishay Siliconix SIHG17N60D-GE3
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- SIHG17N60D-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 17A TO247AC
- Transistors - FETs, MOSFETs - Single
- SIHG17N60D-GE3 数据表
- TO-247-3
- Tube
-
无铅/符合RoHS - 14446
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number SIHG17N60D-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 600V 17A TO247AC |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247AC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 277.8W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 17A (Tc) |
| Rds On (Max) @ Id, Vgs 340mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1780 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
SIHG17N60D-GE3 保障
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