Vishay Siliconix SIJA22DP-T1-GE3
- SIJA22DP-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 25V 64A/201A PPAK
- Transistors - FETs, MOSFETs - Single
- SIJA22DP-T1-GE3 数据表
- PowerPAK® SO-8 Dual
- Cut Tape (CT)
- 无铅/符合RoHS
- 1765
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
- 点击获取费率
Part Number SIJA22DP-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 25V 64A/201A PPAK |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 Dual |
Supplier Device Package PowerPAK® SO-8 Dual |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 4.8W (Ta), 48W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 25 V |
Current - Continuous Drain (Id) @ 25°C 64A (Ta), 201A (Tc) |
Rds On (Max) @ Id, Vgs 0.74mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 15 V |
Vgs (Max) +20V, -16V |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case PowerPAK® SO-8 Dual |
SIJA22DP-T1-GE3 保障
• 响应及时
• 质量保证
• 全球通行
• 具有竞争力的价格
• 供应链一站式配套服务
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Vishay Siliconix
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