Vishay Siliconix SQM60N20-35_GE3
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- SQM60N20-35_GE3
- Vishay Siliconix
- MOSFET N-CH 200V 60A TO263
- Transistors - FETs, MOSFETs - Single
- SQM60N20-35_GE3 数据表
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
无铅/符合RoHS - 1560
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number SQM60N20-35_GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 200V 60A TO263 |
| Package Tube |
| Series Automotive, AEC-Q101, TrenchFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263 (D²Pak) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 375W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
| Rds On (Max) @ Id, Vgs 35mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
SQM60N20-35_GE3 保障
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