STMicroelectronics STW50N65DM6
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- STW50N65DM6
- STMicroelectronics
- MOSFET N-CH 650V 33A TO247-3
- Transistors - FETs, MOSFETs - Single
- STW50N65DM6 数据表
- TO-247-3
- Tube
-
无铅/符合RoHS - 23393
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number STW50N65DM6 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer STMicroelectronics |
| Description MOSFET N-CH 650V 33A TO247-3 |
| Package Tube |
| Series MDmesh™ DM6 |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247 Long Leads |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 250W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 33A (Tc) |
| Rds On (Max) @ Id, Vgs 91mOhm @ 16.5A, 10V |
| Vgs(th) (Max) @ Id 4.75V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 52.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 52500 pF @ 100 V |
| Vgs (Max) ±25V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
STW50N65DM6 保障
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