Vishay Siliconix SUP85N10-10-GE3
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- SUP85N10-10-GE3
- Vishay Siliconix
- MOSFET N-CH 100V 85A TO220AB
- Transistors - FETs, MOSFETs - Single
- SUP85N10-10-GE3 数据表
- TO-220-3
- Cut Tape (CT)
-
无铅/符合RoHS - 4639
- 现货库存/授权经销商/工厂剩余库存
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| Part Number SUP85N10-10-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 100V 85A TO220AB |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package - |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.75W (Ta), 250W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 85A (Tc) |
| Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 6550 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-220-3 |
SUP85N10-10-GE3 保障
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