Toshiba Semiconductor and Storage TK10J80E,S1E
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- TK10J80E,S1E
- Toshiba Semiconductor and Storage
- MOSFET N-CH 800V 10A TO3P
- Transistors - FETs, MOSFETs - Single
- TK10J80E,S1E 数据表
- TO-3P-3, SC-65-3
- Tube
-
无铅/符合RoHS - 988
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
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| Part Number TK10J80E,S1E |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 800V 10A TO3P |
| Package Tube |
| Series π-MOSVIII |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-3P-3, SC-65-3 |
| Supplier Device Package TO-3P(N) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 250W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 800 V |
| Current - Continuous Drain (Id) @ 25°C 10A (Ta) |
| Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-3P-3, SC-65-3 |
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