EPC EPC2019ENG
- EPC2019ENG
- EPC
- TRANS GAN 200V 8.5A BUMPED DIE
- Transistors - FETs, MOSFETs - Single
- EPC2019ENG 数据表
- Die
- Die
- 无铅/符合RoHS
- 3928
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
- 点击获取费率
Part Number EPC2019ENG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer EPC |
Description TRANS GAN 200V 8.5A BUMPED DIE |
Package Die |
Series eGaN? |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Technology GaNFET (Gallium Nitride) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 200V |
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta) |
Rds On (Max) @ Id, Vgs 50 mOhm @ 7A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V |
Drive Voltage (Max Rds On, Min Rds On) 5V |
Vgs (Max) +6V, -4V |
Package_case Die |
EPC2019ENG 保障
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• 质量保证
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