GeneSiC Semiconductor G3R160MT12D
- G3R160MT12D
- GeneSiC Semiconductor
- SIC MOSFET N-CH 22A TO247-3
- Transistors - FETs, MOSFETs - Single
- G3R160MT12D 数据表
- TO-247-3
- Tube
- 无铅/符合RoHS
- 1549
- 现货库存/授权经销商/工厂剩余库存
- 1年质量保障 》
- 点击获取费率
Part Number G3R160MT12D |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer GeneSiC Semiconductor |
Description SIC MOSFET N-CH 22A TO247-3 |
Package Tube |
Series G3R™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247-3 |
Technology SiCFET (Silicon Carbide) |
Power Dissipation (Max) 123W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1200 V |
Current - Continuous Drain (Id) @ 25°C 22A (Tc) |
Rds On (Max) @ Id, Vgs 192mOhm @ 10A, 15V |
Vgs(th) (Max) @ Id 2.69V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 15 V |
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 800 V |
Vgs (Max) ±15V |
Drive Voltage (Max Rds On, Min Rds On) 15V |
Package_case TO-247-3 |
G3R160MT12D 保障
• 响应及时
• 质量保证
• 全球通行
• 具有竞争力的价格
• 供应链一站式配套服务
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